5 ECTS credits
130 h study time
Offer 1 with catalog number 4023818ENR for all students in the 1st semester at a (E) Master - advanced level.
1. CMOS scaling:
a. Brief history, Trends, Moore’s law.
b. Review of critical figures-of-merit for digital applications: power-performance-area-cost
c. Environmental impact
2. Essential of semiconductor physics
a. Single particle
b. Crystals and effective mass approximation
c. Density of states and occupation functions
d. Semiconductors and PN junctions
3. The planar single-gate MOSFET
a. MOSFET fundamentals.
i. MOS capacitor.
ii. Drift-diffusion transport
b. Advanced MOSFET and short channel effects
4. MOS fabrications techniques
a. Principles of lithography, deposition, etch
b. CMOS fabrication flow
5. Single-gate and multi-gates fully depleted FETs
a. Silicon-on-Insulator (SOI) technology
b. Operation of the FDSOI MOSFET
c. Physics of the double-gate transistor
d. FinFET technology
6. Ballistic transport
a. Mean free path
b. The thermionic model
c. The Landauer model
d. The nano-MOSFET: transmission model, injection velocity and ballistic mobility.
7. Heterostructures and HEMTs
a. Heterojunction
b. HEMTs transistors for high frequency/ high power applications.
c. Epitaxy techniques
8. Tunnel effect
a. Transmission matrix
b. WKB theory
c. Band-to-band tunnelling in diodes
d. Tunnelling in MOSFETs
9. Steep-slopes transistors:
a. Tunnel-FETs
b. Ferro-FETs
10. Design-Technology Co-Optimization (DTCO)
a. Methodology
b. Importance of parasitics
11. 2D-and 1D-transistors
a. 2D transistors: M
b. 1D transistors: Carbon Nanotubes
Practical sessions
- Exercise session: Semiconductor physics and MOS fundamentals
- Exercise session: Simulations of Fully Depleted transistors
- Exercise session: Ballistic transport
- Exercise session: Tunnelling and heterostructures
- Self-Study: Variability and reliability of nano-transistors
- Lab: Electrical characterization of advanced transistors
- (optional) visit of imec cleanrooms
Course material:
- (Digital course material) annotated PowerPoint slides; slides discussed during the lectures, complemented by notes and explanations. The course material is distributed before the first course.
Complementary material, recommended:
o M. Lundstrom, “Fundamentals of Nanotransistors”, Ed. World Scientific, 2017.
o S.M. Sze and M.K. Lee, “Semiconductor Devices. Physics and Technology”, 3rd edition, Wiley, 2012.
o J.-P. Colinge and C.A. Colinge, “Physics of semiconductor devices”, Kluwer Academic publishers.
o Y. Tsividis and C. McAndrew, “Operation and Modelling of the MOS Transistor”, Oxford University Press, 3rd edition, 2011.
o J. H. Davies, “The Physics of the low-dimensional semiconductors. An introduction”, Cambridge University Press, 1998.
At the end of the course, the student should be familiar with the physical principles governing modern, nano-scale transistors; in particular, electrostatic control and transport mechanisms (drift, diffusion, tunnelling and ballistic). He should understand what drives CMOS scaling and understand the operation of the various devices reviewed in the course. He should link device design to key figures of merit and to fabrication techniques.
The Master in Engineering Sciences has in-depth knowledge and understanding of
• 3. the advanced methods and theories to schematize and model complex problems or processes
The Master in Engineering Sciences can
• 4. reformulate complex engineering problems in order to solve them (simplifying assumptions, reducing complexity)
• 7.present and defend results in a scientifically sound way, using contemporary communication tools, for a national as well as for an international professional or lay audience
• 8. collaborate in a (multidisciplinary) team
• 11. think critically about and evaluate projects, systems, and processes, particularly when based on incomplete, contradictory and/or redundant information
• 12. collaborate in a (multidisciplinary) team
The Master in Engineering Sciences has
• 12 a creative, problem-solving, result-driven, and evidence-based attitude, aiming at innovation and applicability in industry and society
• 13 a critical attitude towards one’s own results and those of others
• 14 consciousness of the ethical, social, environmental, and economic context of his/her work and strives for sustainable solutions to engineering problems including safety and quality assurance aspects
• 16 an attitude of life-long learning as needed for the future development of his/her career
The Master in Electrical Engineering:
• 17 Has an active knowledge of the theory and applications of electronics, information, and communication technology, from component up to system level.
• 19 Has a broad overview of the role of electronics, informatics and telecommunications in industry, business, and society.
• 20 Is able to analyse, specify, design, implement, test and evaluate individual electronic devices, components and algorithms, for signal-processing, communication and complex systems.
• 21 Is able to model, simulate, measure and control electronic components and physical phenomena.
• 22 Is aware of and critical about the impact of electronics, information, and communication technology on society.
The final grade is composed based on the following categories:
Other Exam determines 100% of the final mark.
Within the Other Exam category, the following assignments need to be completed:
Evaluation:
- Oral exam (70% of the total score): Few questions covering different chapters with written preparation and followed by a discussion. The use of the course material is allowed for some of the questions.
- Practical sessions (30% of the total score): Based on the work assignment provided during the exercise session.
- Grading method: scale from 0 to 20
- Can retake in second session: Yes
This offer is part of the following study plans:
Master of Electronics and Information Technology Engineering: Standaard traject (only offered in Dutch)
Master of Electrical Engineering: Standaard traject BRUFACE J